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Run Card for cmos150 |
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Step 35.0 |
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Process: PSG Deposition and Densification: Target = 700 nm |
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Operator |
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1. |
Remove PR in O2 plasma (matrix) standard recipe. |
March of 5th, 2002 |
vorosl |
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2. |
Standard clean wafers in sink9 at MEMS
side first (no dip), then MOS side (10 sec dip 25:1 HF). Include one PSG monitoring
wafer and PCH, too.
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3. |
Deposit 700 nm PSG, recipe: 11SDLTOA in
tystar11 (MOS clean); time: 60 min.; temperature: 450 C
Note: test run 30 min. thickness=3500 A door
had to be pushed to avoid DNTLK.
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4. |
Densify glass in tystar17 at 900 C,
immediately after PSG deposition. Include PSG control and PCH.
Recipe: PSGDENS.017
5 min dry O2
20 m. wet O2
5 min dry O2
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5. |
Measure Tpsg thickness (using PSG
control and working wafers):
N+ region Tox[A]=
P+ region Tox[A]=
wafer
top center flat
left right
PSG 7076 7086
7304 7166 7105
Etch oxide on PCH.
Measure Rs of P+ S/D implant [ohm/square]=
PCH
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6. |
Do wet oxidation dummy run afterwards to
clean tube (1hour). temp=950 C, WETOX.017.
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