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Run Card for cmos150 |
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Step 33.0 |
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Process: P+ S/D Photo: Mask P+S/D (PSD chrome-df) |
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Operator |
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Standard I-line Process with the thicker UV resist. |
February of 25th, 2002 |
vorosl |
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1. |
HMDS |
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Program: 2 on svgcoat6 |
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2. |
Spin and Soft Bake |
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Program: 2 and 2 on svgcoat6 |
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Photoresist: UV26-1.5 (Shipley) |
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Thickness of PR: ~1.35 micron at RPM: 4000 |
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3. |
Expose by ASML: energy=22 mJ/cm2 |
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Mask: P+S/D |
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4. |
Post exposure bake (Program: 2) |
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(at 110 C for 90 sec) |
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5. |
Develop (Program: 2) developer: LDD26 |
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6. |
Inspect |
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7. |
Descum |
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This step was skipped since there was no 6” tool for it |
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8. |
Hard Bake (oven) |
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(at 120 C for 2 hours) |
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