Run Card for cmos150

 

Step 33.0

 

 

 

 

 

Process: P+ S/D Photo: Mask P+S/D (PSD chrome-df)

Date

Operator

 

 

 

 

 

Standard I-line Process with the thicker UV resist.

February of 25th, 2002

vorosl

 

 

 

 

1.

HMDS

 

 

 

Program: 2 on svgcoat6

 

 

 

 

 

 

2.

Spin and Soft Bake

 

 

 

Program: 2 and 2 on svgcoat6

 

 

 

Photoresist: UV26-1.5 (Shipley)

 

 

 

Thickness of PR: ~1.35 micron at RPM: 4000

 

 

 

 

 

 

3.

Expose by ASML: energy=22 mJ/cm2

 

 

 

Mask: P+S/D

 

 

4.

Post exposure bake (Program: 2)

 

 

 

(at 110 C for 90 sec)

 

 

5.

Develop (Program: 2) developer: LDD26

 

 

 

 

 

 

6.

Inspect

 

 

 

 

 

 

7.

Descum

 

 

 

This step was skipped since there was no 6 tool for it

 

 

 

 

 

 

8.

Hard Bake (oven)

 

 

 

(at 120 C for 2 hours)