Run Card for cmos150

 

Step 3.0

 

 

 

 

 

Process: Well Photo - Mask NWELL (CWN chrome-df)

Date

Operator

 

 

 

 

 

Standard I-line Process

 

 

 

 

 

1.

HMDS

13/08/01

vorosl

 

Program:1 on svgcoat6

 

 

 

 

 

 

2.

Spin and Soft Bake

13/08/01

vorosl

 

Program: 1 and 1 on svgcoat6

 

 

 

photoresist: UV-210 (Shipley)

 

 

 

Thickness of PR= 4500

 

 

 

 

 

 

3.

Expose by ASML

13/08/01

vorosl, fatima

 

Job name: baseline, energy of light= 30 mJ/cm2

 

 

 

NWELL mask

 

 

 

 

 

 

 

Note: Aperture was inside. There was no problem for ASML to find the alignment marks on the wafers which had oxide (300 A) and nitride (1000 A) layers. Pre-alignment option should be on.

 

 

 

 

 

 

4.

Post exposure Bake (program:1)

13/08/01

fatima

 

 

 

 

5.

Develop (program:1)

13/08/01

fatima

 

 

 

 

6.

Inspect

13/08/01

vorosl

 

 

 

 

7.

Descum

 

 

 

This step was skipped, since there is no 6 tool for it.

 

 

 

 

 

 

8.

Hard Bake (more than 30 min. in the oven, 120 C)

13/08/01

vorosl