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Run Card for cmos150 |
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Step 3.0 |
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Process: Well Photo - Mask NWELL (CWN chrome-df) |
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Operator |
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Standard I-line Process |
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1. |
HMDS |
13/08/01 |
vorosl |
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Program:1 on svgcoat6 |
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2. |
Spin and Soft Bake |
13/08/01 |
vorosl |
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Program: 1 and 1 on svgcoat6 |
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photoresist: UV-210 (Shipley) |
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Thickness of PR= 4500 Å |
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3. |
Expose by ASML |
13/08/01 |
vorosl, fatima |
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Job name: baseline, energy of light= 30 mJ/cm2 |
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NWELL mask |
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Note: Aperture was inside. There was no problem for ASML to find the alignment marks on the wafers which had oxide (300 A) and nitride (1000 A) layers. Pre-alignment option should be on. |
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4. |
Post exposure Bake (program:1) |
13/08/01 |
fatima |
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5. |
Develop (program:1) |
13/08/01 |
fatima |
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6. |
Inspect |
13/08/01 |
vorosl |
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7. |
Descum |
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This step was skipped, since there is no 6” tool for it. |
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8. |
Hard Bake (more than 30 min. in the oven, 120 C) |
13/08/01 |
vorosl |