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Run Card for cmos150 |
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Step 20.0 |
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Process:N-Channel
Punchthrough and Threshold Adjustment Photo:Mask
NWELL inverse, clear field
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Date |
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Standard Lithography Process |
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1.
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HMDS
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11/29/01
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vorosl, jcpeng
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Program: 1 on svgcoat6
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2.
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Spin and Soft Bake
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11/29/01
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vorosl, jcpeng
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Program: 7 and 1 on svgcoat6
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Photoresist: UV26-1.5 (Shipley)
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Thickness of PR: 1.4 micron
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3.
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Expose by ASML
Alignment marks are cleared 80 mJ/cm2, but wafers rejected due to alignment error. |
11/29/01
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vorosl
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4.
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Post exposure bake (Program: 1)
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5.
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Develop (Program: 1)
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6.
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Inspect
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7.
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Descum
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This step was skipped since there was no 6? tool
for it
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8.
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Hard Bake
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