Run Card for cmos150

 

Step 2.0

 

 

 

 

 

Process:   Nitride Deposition (9snita Recipe)

Date

Operator

 

                 Target= 1000 Å

 

 

 

 

 

 

1.

Transfer wafers to tystar9 right after step 1.3.

 Deposit includes only NCH.

 

 


 
 
     DOOR ß                                                     à  PUMP

         

           Empty          filled (4”)         filled (6”)

08/09/01

vorosl

 

 

 

 

2.

Deposition time of 100 nm Nitride = 30 mins

08/09/01

vorosl

 

Note:  Only 12 wafers can be loaded at a time in tystar9.First Lot (#1-10) was loaded right after Oxidation. Second Lot (#12-15, NCH, T2-5) was delayed for 2 hrs.

 

 

 

 

 

 

3.

Measure Nitride Thickness on NCH. 

08/10/01

fatima

 

Use nanospec, Nitride on 300A Oxide program, 10x lens

 

 

 

Tnitride =

 

 

 

 

top

center

flat

left

right

average

S.D

NCH

983.9

974.6

987

985.1

978.4

981.8

4.24

T2

1045.1

1044.2

1063.1

1063.6

1049.6

1053.12

8.184

#1

1050.9

1040.3

1056.8

1056.0

1047.1

1050.22

5.216

#5

1008

996.7

1011.1

1008.5

1004.4

1005.74

4.152

#10

982.4

971.3

983.1

984.6

979.3

980.14

3.872

 

 

 

 

 

 

 

Note:  Thickness of wafers located on left side of holder closest to the 4 inch lot was slight larger than the thickness of wafers on the right side.