Run Card for cmos150

Step 17.0
Process:Locos Oxidation:target = 650 nm

Date

Operator

 
1.
TCE clean furnace tube (tystar17)
11/20/01
vorosl
2.
Remove PR in O2 plasma (matrix) and piranha clean wafers.
Standard clean wafers in Sink9 ( MEMS side then MOS side). 

Control wafers are involved (NCH, PCH).

10 min. piranha
Dip in HF 25:1 for 5-10 sec. 
Include PCH, NCH
3.
Wet oxidation at 950 C (recipe: WETOX.017)
11/21/01
vorosl
10 min. dry O2

5 hours wet O2

10 min. dry O2

20 min. N2 anneal

Note: Test wet oxidation 60 min. gave only 1800 A oxide thickness, so 20 more minutes was given. Date: 11/21/01

4.
Measure tox on 3 work wafers.
11/21/01
jcpeng
wafer
top
center
flat
left
right
NCH
6.2
6.37
6.3
6.25
6.2
#1
6.16
6.4
6.4
6.25
6.24
#4
6.1
6.37
6.4
6.26
6.28
#14
6
6
6
6
6
#15
6.1
6.35
6.3
6.2
6.2