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Run Card for cmos150 |
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Step 15.0 |
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Process:N-Well
Field Implant Photo:Mask NWELL (CWN
chrome-df)
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Date |
Operator |
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Standard I-line Process |
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1.
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HMDS
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11/08/01
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vorosl, jcpeng
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Program: 1 on svgcoat6
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2.
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Spin and Soft Bake
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11/08/01
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vorosl, jcpeng
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Program: 7 and 1 on svgcoat6
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photoresist: UV26-1.5 (Shipley)
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Thickness of PR= 14000 Å
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3000 RPM
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Soft Bake: 60 sec at 130C
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3.
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Expose by ASML
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11/08/01
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vorosl
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Alignment marks were cleared 80 mJ/cm2
(baseline-clearout), only developed without PEB.
Job name: baseline, energy of light= 30 mJ/cm2 |
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NWELL mask
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4.
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Post Exposure Bake (program:1)
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11/08/01
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vorosl, jcpeng
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90 sec at 110C
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5.
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Develop (program:1)
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11/08/01
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vorosl, jcpeng
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6.
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Inspect
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11/08/01
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vorosl
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7.
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Descum
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This step was skipped, since there is no 6? tool
for it.
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8.
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Hard Bake (more than 2 hours in the oven, 120 C)
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11/08/01
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jcpeng
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