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Run Card for cmos150 |
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Step 13.0 |
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Process: P-Well Field Implant Photo: Mask PFIELD (NWELL inverse, clear-field) |
Date |
Operator |
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Standard Lithography Process |
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1. |
HMDS |
10/24/01 |
vorosl |
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Program: 1 on svgcoat6 |
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2. |
Spin and Soft Bake |
10/24/01 |
vorosl |
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Program: 1 and 7 on svgcoat6 |
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photoresist: UV26-1.5 (Shipley) |
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Thickness of PR= 14000 Å |
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3000 RPM |
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Soft Bake: 60 sec at 130C |
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3. |
Expose by ASML |
10/24/01 |
vorosl |
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Job name: baseline, energy of light= 18 mJ/cm2 |
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Note: Energy kept low to avoid previous resist developing. Both active and NWELL area covered with PR. NWELL inverse, clear-field mask |
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4. |
Post Exposure Bake (program:1) |
10/24/01 |
vorosl |
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90 sec at 110C |
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5. |
Develop (program:1) |
10/24/01 |
vorosl |
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6. |
Inspect |
10/24/01 |
vorosl |
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7. |
Descum |
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This step was skipped, since there is no 6” tool for it. |
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8. |
Hard Bake (more than 2 hours in the oven, 120 C) |
10/24/01 |
vorosl |