Run Card for cmos150

 

Step 13.0

 

 

 

 

 

Process: P-Well Field Implant Photo: Mask PFIELD (NWELL inverse, clear-field)

Date

Operator

 

 

 

 

 

Standard Lithography Process

 

 

 

 

 

1.

HMDS

10/24/01

vorosl

 

Program: 1 on svgcoat6

 

 

 

 

 

 

2.

Spin and Soft Bake

10/24/01

vorosl

 

Program: 1 and 7 on svgcoat6

 

 

 

photoresist: UV26-1.5 (Shipley)

 

 

 

Thickness of PR= 14000

 

 

 

3000 RPM

 

 

 

Soft Bake: 60 sec at 130C

 

 

 

 

 

 

3.

Expose by ASML

10/24/01

vorosl

 

Job name: baseline, energy of light= 18 mJ/cm2

 

 

 

Note: Energy kept low to avoid previous resist developing.

Both active and NWELL area covered with PR.

NWELL inverse, clear-field mask

 

 

 

 

 

 

4.

Post Exposure Bake (program:1)

10/24/01

vorosl

 

90 sec at 110C

 

 

 

 

 

 

5.

Develop (program:1)

10/24/01

vorosl

 

 

 

 

6.

Inspect

10/24/01

vorosl

 

 

 

 

7.

Descum

 

 

 

This step was skipped, since there is no 6 tool for it.

 

 

 

 

 

 

8.

Hard Bake (more than 2 hours in the oven, 120 C)

10/24/01

vorosl