Run Card for cmos150

Step 12.0
Process: Plasma Etch Nitride in lam4

Date

Operator
1.
Plasma Etch Nitride in lam4.
10/04/01
vorosl
Actual Etch time = 55 seconds for #1-#7, #12-13,

105 seconds for #8-10 and #14, #15.
Recipe: 200 (for more details see step 4.0)Power: 125 W

 
Note: Etch rate was measured on dummy wafers.
Calculated etch rate= 1200 A/min
2.
Measure oxide thickness on each 

work wafer (out of active area).
10/11/01
vorosl, jcpeng
Nanospec, 10x, oxide on Si recipe
wafer
center
spot 1.
spot 2.
#1
277
260
273
#2
280
284
270
#3
277
278
270
#4
287
268
283
#5
251
255
243
#6
252
260
251
#7
249
258
248
#8
284
248
268
#9
235
235
240
#10
215
229
213
#12
278
280
279
#13
238
233
235
#14
236
250
241
#15
211
219
217

Note: Oxide thickness for #15 close to the edge ~170 A.
3.
Do not remove PR. Inspect. Measure PR thickness (basically it is the thickness of nitride and PR) covering active area. Use alpha stepper (as200). Tpr [nm]=

UV bake again with program ?J?.
10/11/01
vorosl, jcpeng

 
wafer
#1
#2
#3
#4
#5
#6
#7
#12
#13
nitride+PR after lam4
600
530
600
600
600
600
600
230
250
nit.+PR after 2nd uvbake
510
460
530
510
520
530
530
190
175
wafer
#8
#9
#10
#14
#15
nitride+PR after lam4
600
600
600
240
250
nit.+PR after 2nd uvbake
500
520
500
210
210

Note:
Insufficient masking thickness for all wafers!!!!

^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^

Had to rework the active PR. But ASML was down till

Date: 10/28/01

Stripped the PR in matrix. Clean all wafers in sink9 (MEMS side).

HMDS

Coat: UV210-0.6 PR (1250 RPM)~10 000 A for group of 2 000 A nitride.

#8,9,10,14,15

softbake 130 C/ 60 sec.

PEB130 C/ 60 sec.

New photoresist was utilized from Shipley. Paper claimed 0.5-0.6 micron. 

UV26-1.5 ( 3000 RPM) ~14 000 A for group of 1 000 A nitride.

#1,2,3,4,5,6,7,12,13

softbake130 C/ 60 sec.

PEB110 C/ 90 sec.

Expose: To avoid "8 micron" error:->

ASML alignment mark clear-out (baseline_clear, 70 mJ)

do not PEB, just develop then

ASML baseline job, active energy =18 mJ.

UVBAKE: program "J".

(Harsh program, had to make sure that PR does not develop for the next litho step. Conventional oven hard bake failed to resist for the next exposure.)

Measure the PR+nitride thickness on active area.

> 8 000 A on all wafers. DAKTEC.