Run Card for cmos150

 

 

step 10.0

 

 

 

 

 

 

Process: Pad Oxidation/ Nitride deposition

 

Date

Operator

 

target= 30 (+6) nm SiO2 + 100 (+10) nm Si3N4

 

 

 

 

 

 

 

 

1.

TCA clean furnace tube (tystar17).

Reserve tystar9.

 

09/13/01

vorosl

 

Note: TCA was skipped since there was no other user nor process between the previous step and this one.

 

 

 

2.

Standard clean wafers in sink9 (MOS side). Include NCH, PCH.

 

09/13/01

vorosl

 

 

 

 

 

3.

Dry oxidation at 950 C (DRYOX.017).

 

09/13/01

vorosl

 

60 min. dry O2

 

 

 

 

30 minutes N2 anneal.

 

 

 

 

 

 

 

 

4.

Measure oxide thickness on NCH Tox [A]=

 

09/13/01

vorosl

 

Use nanospec, oxide program, 10x lens

 

 

 

 

wafer

top

center

flat

left

right

NCH

305

303

301

302

301

 

 

 

 

 

 

 

 

5.

Deposit 100 (+10) nm of Si3N4 immediately (9snita) in tystar9: only include PCH.

time = 30min., temperature = 800 C

 

09/13/01

vorosl

 

 

 

 

 

 

Note: Tystar9 can accommodate only10 wafers (6) at the same time.

#1-#10 went with the first lot, the rest of them 2 hours later.

 

 

 

 

 

 

 

 

6.

Measure nitride thickness on PCH. Tnitride[A]=

nanospec, nitride on 300 A oxide program.

 

09/14/01

vorosl

 

wafer

top

center

flat

left

right

PCH

1120

1114

1145

1138

1120

 

 

 

 

 

 

 

 

 

Note: The next step (7) is not part of the standard process.

 

 

 

 

 

 

 

 

7.

Deposit one more 100 nm Si3N4 in tystar9 on 5 wafers. Recipe: 9SNITA, 30 min.

 

09/21/01

vorosl

 

Measure nitride thickness on the 5 wafers, Tnitride[A]=

 

 

 

 

#8

#9

#10

#14

#15

2100

2100

2150

2200

2200