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Run Card for cmos150 |
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step 10.0 |
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Process: Pad Oxidation/ Nitride deposition |
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target= 30 (+6) nm SiO2 + 100 (+10) nm Si3N4 |
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1. |
TCA clean furnace tube (tystar17). Reserve tystar9. |
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09/13/01 |
vorosl |
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Note: TCA was skipped since there was no other user nor process between the previous step and this one. |
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2. |
Standard clean wafers in sink9 (MOS side). Include NCH, PCH. |
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09/13/01 |
vorosl |
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3. |
Dry oxidation at 950 C (DRYOX.017). |
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09/13/01 |
vorosl |
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60 min. dry O2 |
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30 minutes N2 anneal. |
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4. |
Measure oxide thickness on NCH Tox [A]= |
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09/13/01 |
vorosl |
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Use nanospec, oxide program, 10x lens |
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5. |
Deposit 100 (+10) nm of Si3N4 immediately (9snita) in tystar9: only include PCH. time = 30min., temperature = 800 C |
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09/13/01 |
vorosl |
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Note: Tystar9 can accommodate only10 wafers (6”) at the same time. #1-#10 went with the first lot, the rest of them 2 hours later. |
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6. |
Measure nitride thickness on PCH. Tnitride[A]= nanospec, nitride on 300 A oxide program. |
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09/14/01 |
vorosl |
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Note: The next step (7) is not part of the standard process. |
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7. |
Deposit one more 100 nm Si3N4 in tystar9 on 5 wafers. Recipe: 9SNITA, 30 min. |
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09/21/01 |
vorosl |
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Measure nitride thickness on the 5 wafers, Tnitride[A]= |
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