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Run
Card for CMOS150 |
Step
0.0 |
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Starting
wafers |
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Date |
operator |
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1 |
20-40
ohm-cm, p-type, <100> |
17/07/2001 |
vorosl |
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thickness=675+/-20
micron |
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Grade: P
(prime) |
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size:
6" |
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15 wafers
+ 2 control NCH and PCN |
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2 |
Scribe
lot and wafer number on each wafers, |
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including
controls. |
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Piranha
clean and dip in sink9. |
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Measure
bulk resistivity (ohm-cm) of each on |
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SONOGAGE. |
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Note:
SONOGAGE is out of order, |
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THIS STEP
WAS SKIPPED! |
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3 |
Zero
layer photo (PM marks) |
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HMDS and
coat wafers with SVGCOAT6 |
17/07/2001 |
vorosl |
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Program
#1 for all station, proximity bake. |
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Expose
using ASML |
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18/07/2001 |
vorosl |
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job name:
baseline, energy=30mJ/cm2 |
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Zero
layer reticle |
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Post exposure
bake and develop using |
Missed
out!!! |
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SVGDEV6
program #1 |
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Hard bake |
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18/07/2001 |
vorosl |
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Note:
Missed out developing, rework Zero layer |
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Rework: |
Ashing PR
in MATRIX |
19/07/2001 |
vorosl |
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Power 450
W, time 1min. 30sec. |
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Standard
clean in SINK9 |
19/07/2001 |
vorosl |
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Put it in
piranha for 10 min. (MEMS side) |
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(add 100
ml H2O2 to it) |
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Rinse (2
cycles) |
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Dip into
10:1 HF until dewet or 1 min. |
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Rinse (2
cycles) |
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Spindryer
for 6 inch cassette |
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Zero
layer photo (PM marks) |
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HMDS and
coat wafers with SVGCOAT6 |
20/07/2001 |
vorosl |
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Program
#1 for all station, proximity bake. |
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Expose
using ASML |
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20/07/2001 |
vorosl |
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job name:
baseline, energy=30mJ/cm2 |
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Zero
layer reticle, identified by bar code |
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Post
exposure bake (130 C) and develop using |
20/07/2001 |
vorosl |
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SVGDEV6
program #1 |
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Inspect 2
alignment marks on all wafers |
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Pattern
should be white and bright |
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Hard bake
in oven, time more than 30 min. |
20/07/2001 |
vorosl |
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4 |
Etch zero
layer into the substrate in LAM4 |
24/07/2001 |
vorosl |
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Target
depth= 1200 A |
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Recipe=
6000, power 200, time 30 sec |
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Check the
first wafer before proceed |
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Scribe
lot and wafer number on each wafers |
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Note:
Lam4 had exit arm problem on 23/07/2001 |
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Ash
photoresist in MATRIX |
24/07/2001 |
vorosl |
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Standard
clean of wafers (MEMS) |
24/07/2001 |
fatima |
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Note:
wafer #11 has broken during the drying process |
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Measure
the depth of the alignment marks. |
24/07/2001 |
fatima |
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AS200 |
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depth in
[kA] |
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wafer # |
left |
right |
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1 |
1.3 |
1.3 |
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2 |
1.3 |
1.3 |
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3 |
1.3 |
1.3 |
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4 |
1.3 |
1.3 |
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5 |
1.3 |
1.3 |
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6 |
1.15 |
1.15 |
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7 |
1.2 |
1.2 |
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8 |
1.2 |
1.2 |
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9 |
1.2 |
1.2 |
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10 |
1.2 |
1.2 |
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11 |
broken |
broken |
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12 |
1.3 |
1.3 |
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13 |
1.3 |
1.3 |
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14 |
1.2 |
1.2 |
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15 |
1.2 |
1.2 |
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