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Run Card for cmos150 |
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Step 25.0 |
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Process: Poly Gate Photo |
Date |
Operator |
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Standard I-line Process |
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1. |
HMDS |
1/10/02 |
vorosl, johnkcp |
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Program: 1 on svgcoat6 |
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2. |
Spin and Soft Bake |
1/10/02 |
vorosl, johnkcp |
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Program: 7 and 1 on svgcoat6 |
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photoresist: UV210-0.6 (Shipley) |
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Thickness of PR= 4200 Å |
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3. |
Focus-Exposure Matrix Test Focus offset: 1.2 Energy= 20 mJ/cm^2 Minimum feature resolved= 0.3 micron |
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