Run Card for cmos150
step 24.0
Process: Gate Oxidation/Poly-Si Deposition

Date
Operator
target= 20 (+/- 2)nm SiO2 + 450 (+/-40) nm Si3N4
1.
TCA clean furnace tube (tystar17). 
Reserve poly-Si deposition tube (tystar10).
1/08/02
vorosl, johnperng
2.
Standard clean wafers in sink9 (MEMS and MOS side). Include NCH, PCH.
Add two prime wafers <100> Tox and Tpoly monitoring wafers.
1/08/02
vorosl, johnperng
3. 
Dip off sacrificial oxide in 25:1 HF until NCH and PCH dewet (3 min)
4.
Dry oxidation at 950 C (DRYOX.017). 
1/08/02
vorosl, johnperng
30 min. dry O2
20 minutes N2 anneal.
Include NCH, PCH, Tox, Tpoly
 5.
Deposit 450 nm of phosphorus doped poly-Si immediately after oxidation.Recipe: 10sdplya: 120SiH4/4PH3/375mT/615C only include Tpoly1
6.
Measure oxide thickness on NCH, PCH, Tox [A]= 
1/08/02
vorosl, johnperng
Use nanospec, oxide program, 10x lens
wafer
top
center
flat
left
right
Tox
232
229
229
230
220
PCH
177
173
169
127
175
NCH
188
194
193
195
183

 Measure Dit and Qox on Tox [A]=


 
Center
Left
Flat
Right
Top
Dit
3.15e10
3.5e10
3.89e10
3.4e10
3.9e10
Qox
1.17e11
1.1e11
1e11
1e11
1.1e11
Nsc
5.8e14
5.6e14
5.37e14
5.6e14
5.58e14
IQF
1.4
1.43
1.5
1.43
1.5

Measure poly thickness on Tpoly1 [A]=


 
Wafer
Top
Center
Flat
Left
Right
Tpoly1
2513
2498
2549
2493
2524

Poly thickness checked on all process wafers [A]=


 
#1
#2
#3
#4
#5
2488
2487
2476
2495
2478
#6
#7
#8
#9
#10
2508
2591
2555
2552
2592
#11
#12
#13
#14
#15
2588
2570
2495
2167

 
 

Gate oxidation and poly deposition were reworked on wafers #3, #4, #10, and #15

 

Measure oxide thickness on Tox2 [A]=


 
Wafer
Top
Center
Flat
Left
Right
Tox2
224
230
261
232
229


 

Measure poly thickness on Tpoly2 [A]=


 
Wafer
Top
Center
Flat
Left
Right
Tpoly2
4204
4288
4556
4403
4377