Run Card for cmos150

Step 23.0

Process: P-Channel Punchthrough and Threshold Adjustment Implant. Include PCH.

Date

Operator

Note: This step is processed in the Implant Center.

12/20/01

vorosl

Specifications:

Phosphorus N_d = 1 x 10¹² /cm²

Energy = 190 KeV

B11 N_a = 2.4 x 10¹² /cm²

Energy = 20 KeV

Beam Limit	Flood	Req. wheels	Lot#	Offset Angle
No	No	No	CMOS150	0