Run Card for cmos150

 

Step 21.0

 

 

 

 

 

Process:   N-Channel Punchthrough and Threshold Adjustment Implant

Date

Operator

 

 

 

 

 

Note:  This step is processed in the Implant Center.

12/11/01

vorosl

 

 

 

 

 

Specifications:

 

 

 

 

 

 

 

B11   Na = 8 x 1011  /cm2  

 

 

 

Energy = 120 KeV

 

 

 

 

B11   Na = 1.9 x 1012  /cm2  

 

 

 

Energy = 30 KeV

 

 

 

 

Beam Limit

Flood

Req. wheels

Lot#

Offset Angle

No

No

No

CMOS150

0